CSD18536KTTT . Part Information
Details for CSD18536KTTT . by Texas Instruments
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
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Part Specifications
Transistor Polarity | N Channel |
Continuous Drain Current Id | 349A |
Drain Source Voltage Vds | 60V |
On Resistance Rds(on) | 0.0013ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 1.8V |
Power Dissipation Pd | 375W |
Transistor Case Style | TO-263 |
No. of Pins | 3Pins |
Operating Temperature Max | 175°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 2 - 1 year |
SVHC | No SVHC (27-Jun-2018) |
Alternative Part Descriptions
- MOSFET, N-CH, 60V, 349A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:349A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes | Newark Electronics
- Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; D2PAK | Transfer Multisort Elektronik
- 60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm | Texas Instruments
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