CSD18510KTTT Part Information

Details for CSD18510KTTT by Texas Instruments

Electronic & Electrical Components > Semiconductors - Discretes > Transistors

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Part Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 274A
Drain Source Voltage Vds 40V
On Resistance Rds(on) 0.0014ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 1.7V
Power Dissipation Pd 250W
Transistor Case Style TO-263
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range NexFET Series
Automotive Qualification Standard -
MSL MSL 2 - 1 year
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • MOSFET, N-CH, 40V, 274A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:274A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes | Newark Electronics
  • Transistor: N-MOSFET; unipolar; 40V; 200A; 250W; D2PAK | Transfer Multisort Elektronik
  • 40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm | Texas Instruments

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