US6M1TR

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> Semiconductors - Discretes

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Series Information for US6M1TR - Rohm

Features

  • feature
    1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). zApplication Power switching, DC / DC converter. zPackaging specifications zEquivalent circuit

Description

MOSFET DUAL NP 2.5V/4V TUMT6

Specifications

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
1A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.38ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
1W
Transistor Case Style:
TUMT
No. of Pins:
6Pins
Operating Temperature Max:
-
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Capacitance Ciss Typ:
70pF
Continuous Drain Current Id N Channel:
1.4A
Continuous Drain Current Id P Channel:
1A
Current Id Max:
1.4A
Drain Source Voltage Vds N Channel:
30V
Drain Source Voltage Vds P Channel:
-20V
Fall Time tf:
8ns
Module Configuration:
Dual
On Resistance Rds(on) N Channel:
0.17ohm
On Resistance Rds(on) P Channel:
0.28ohm
Pulse Current Idm:
4A
Rise Time:
6ns
Termination Type:
Surface Mount Device
Voltage Vds Typ:
30V
Voltage Vgs Rds on Measurement:
4V
Voltage Vgs th Max:
2.5V
Voltage Vgs th Min:
1V

Alternate Descriptions

Avnet America

Trans MOSFET N/P-CH 30V/20V 1.4A/1A 6-Pin TUMT T/R

Avnet Europe

Trans MOSFET N/P-CH 30V/20V 1.4A/1A 6-Pin TUMT T/R

Future Electronics

Dual N&PCh 2 W 30 V/20 V 280 mOhm SMT 4 + 2.5 V Drive MosFet -TUMT-6