UMT1NTN

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Series Information for UMT1NTN - Rohm

Features

  • feature
    1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

Description

DUAL TRANSISTOR PNP+PNP

Specifications

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Power Dissipation Pd:
150mW
DC Collector Current:
-150mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SC-88
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Current Ic Continuous a Max:
-150mA
Gain Bandwidth ft Typ:
140MHz
Module Configuration:
Dual
No. of Channels:
2Channels
No. of Transistors:
2
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Output Current Max:
150mA
Output Voltage Max:
50V
Transition Frequency ft:
140MHz

Alternate Descriptions

Avnet America

Trans GP BJT PNP 50V 0.15A 6-Pin UMT T/R

Avnet America product

Avnet Europe

Trans GP BJT PNP 50V 0.15A 6-Pin UMT T/R

Avnet Europe product

Avnet Asia

Trans GP BJT PNP 50V 0.15A 6-Pin UMT T/R

Avnet Asia product

Conrad

Collector current: -150 mA; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -500 mV; DC current gain (hFE): 120; DC current gain hFE - reference current: -1 mA; DC current gain hFE - reference voltage: -6 V; Enclosure type (semiconductors): UMT6; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 2; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 150 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays; Transit frequency f(T): 140 MHz; Type (manufacturer type): UMT1NTN; Type (transistors): PNP

Conrad product

Future Electronics

UMT1N Series 50 V 150 mA Dual PNP General Purpose Isolated Transistor-SOT-363