UMG9NTR

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Series Information for UMG9NTR - Rohm

Features

  • feature
    1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors consist of thin-film resistors lInner circuit with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 6) Only the on/off conditions need to be set for operation, making the circuit design easy. 7) Lead Free/RoHS Compliant.

Description

TRANSISTOR DUAL UM5 NPN/NPN

Specifications

Digital Transistor Polarity:
Dual NPN
Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
10kohm
Base-Emitter Resistor R2:
10kohm
Resistor Ratio R1 / R2:
-
RF Transistor Case:
SOT-353
No. of Pins:
5Pins
Product Range:
UMG9N Series
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Current Ic Continuous a Max:
100mA
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Gain Bandwidth ft Typ:
250MHz
Hfe Min:
30
Module Configuration:
Dual
Operating Temperature Max:
150°C
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Power Dissipation Pd:
150mW
Transistor Case Style:
SOT-353
Transistor Polarity:
NPN
Transistor Type:
General Purpose
Transition Frequency ft:
250MHz

Alternate Descriptions

Avnet America

Trans Digital BJT NPN 100mA 5-Pin UMT T/R

Avnet America product

Avnet Europe

Trans Digital BJT NPN 100mA 5-Pin UMT T/R

Avnet Europe product

Avnet Asia

Trans Digital BJT NPN 100mA 5-Pin UMT T/R

Avnet Asia product

Future Electronics

UMG9N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88A