SIS414DN-T1-GE3 Semiconductors - Discretes by Vishay Intertechnology

MOSFET N CH DIODE 30V 20A PPAK1212-8

Status: Unknown
Series: -
RoHS: Unknown
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Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 20A
Drain Source Voltage Vds 30V
On Resistance Rds(on) 0.013ohm
Rds(on) Test Voltage Vgs 4.5V
Threshold Voltage Vgs 600mV
Power Dissipation Pd 3.4W
Transistor Case Style PowerPAK 1212
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL -
Current Id Max 10.8A
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Voltage Vgs Max 12V

Alternative Descriptions

MOSFET,N CH,DIODE,30V,20A,PPAK1212-8 | Farnell


Frequently Asked Questions

Where can I find additional details, specifications and documents for a SIS414DN-T1-GE3?

Additional datasheets, footprints and schematics for SIS414DN-T1-GE3 are listed on our Part Details page. You can also find images and similar parts to SIS414DN-T1-GE3 on this page.

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What category does SIS414DN-T1-GE3 fall under?

The SIS414DN-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the SIS414DN-T1-GE3 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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Authorised distributors including Farnell have stock available or on a lead time for SIS414DN-T1-GE3.

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