Transistor Polarity | N Channel |
---|---|
Continuous Drain Current Id | 35A |
Drain Source Voltage Vds | 20V |
On Resistance Rds(on) | 0.004ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 1.2V |
Power Dissipation Pd | 5.2W |
Transistor Case Style | PowerPAK 1212 |
No. of Pins | 8Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
Current Id Max | 35A |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Voltage Vgs Max | 20V |
N-CH SINGLE 20V PPAK 1212-8 | TTI Europe |
Mosfet, N-Ch, 20V, 35A, Powerpak8 | Newark Electronics |
MOSFET, N-CH, 20V, 35A, POWERPAK8 | element14 |
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8 | Future Electronics |
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R | Avnet America |
Where can I find additional details, specifications and documents for a SIS410DN-T1-GE3?
Additional datasheets, footprints and schematics for SIS410DN-T1-GE3 are listed on our Part Details page. You can also find images and similar parts to SIS410DN-T1-GE3 on this page.
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What category does SIS410DN-T1-GE3 fall under?
The SIS410DN-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the SIS410DN-T1-GE3 RoHS compliant?
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