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Transistor Polarity | N Channel |
---|---|
Continuous Drain Current Id | 12A |
Drain Source Voltage Vds | 600V |
On Resistance Rds(on) | 0.32ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 2V |
Power Dissipation Pd | 147W |
Transistor Case Style | TO-263 |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
Operating Temperature Min | -55°C |
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SIHB12N60E-GE3 | Newark Electronics |
MOSFET, N-CH, 600V, 12A, TO-263 | element14 |
MOSFET N-Channel 600V 12A D2PAK | RS |
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS | Future Electronics |
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | Avnet America |
N-CH SINGLE 600V TO263 | TTI Europe |
Where can I find additional details, specifications and documents for a SIHB12N60E-GE3?
Additional datasheets, footprints and schematics for SIHB12N60E-GE3 are listed on our Part Details page. You can also find images and similar parts to SIHB12N60E-GE3 on this page.
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What category does SIHB12N60E-GE3 fall under?
The SIHB12N60E-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the SIHB12N60E-GE3 RoHS compliant?
This part has not been flagged as RoHS Compliant.
Which authorised distributors for SIHB12N60E-GE3 have stock available?
Authorised distributors including Newark Electronics, element14, Farnell, RS and Future Electronics have stock available or on a lead time for SIHB12N60E-GE3.
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