Transistor Polarity | N Channel |
---|---|
Continuous Drain Current Id | 35.6A |
Drain Source Voltage Vds | 30V |
On Resistance Rds(on) | 0.0105ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 2.5V |
Power Dissipation Pd | 3.9W |
Transistor Case Style | PowerPAK SO |
No. of Pins | 8Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
Current Id Max | 12.9A |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Voltage Vgs Max | 20V |
N Channel Mosfet, 30V, 35.6A | Newark Electronics |
Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8 | Future Electronics |
Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R | Avnet America |
N-CH SINGLE 30V PPAK SO-8 | TTI Europe |
MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK | Farnell |
Where can I find additional details, specifications and documents for a SI7772DP-T1-GE3?
Additional datasheets, footprints and schematics for SI7772DP-T1-GE3 are listed on our Part Details page. You can also find images and similar parts to SI7772DP-T1-GE3 on this page.
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The SI7772DP-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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