Transistor Polarity | Dual N Channel |
---|---|
Continuous Drain Current Id | 1.13A |
Drain Source Voltage Vds | 20V |
On Resistance Rds(on) | 0.22ohm |
Rds(on) Test Voltage Vgs | 4.5V |
Threshold Voltage Vgs | 450mV |
Power Dissipation Pd | 570mW |
Transistor Case Style | SOT-363 |
No. of Pins | 6Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
Continuous Drain Current Id N Channel | 1.28A |
Current Id Max | 1.28A |
Drain Source Voltage Vds N Channel | 20V |
Module Configuration | Dual |
On Resistance Rds(on) N Channel | 0.22ohm |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Voltage Vds Typ | 20V |
Voltage Vgs Max | 450mV |
Voltage Vgs Rds on Measurement | 4.5V |
SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 | Siliconix / Vishay SI1912EDH-T1-E3 | RS Americas |
MOSFET, NN CH, 20V, SOT363 | element14 |
Where can I find additional details, specifications and documents for a SI1912EDH-T1-E3?
Additional datasheets, footprints and schematics for SI1912EDH-T1-E3 are listed on our Part Details page. You can also find images and similar parts to SI1912EDH-T1-E3 on this page.
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The SI1912EDH-T1-E3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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