SI1912EDH-T1-E3 Semiconductors - Discretes by Vishay Intertechnology

MOSFET NN CH 20V SOT363

Status: Unknown
Series: -
RoHS: Unknown
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Prices starting from US$0.17


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Specifications

Transistor Polarity Dual N Channel
Continuous Drain Current Id 1.13A
Drain Source Voltage Vds 20V
On Resistance Rds(on) 0.22ohm
Rds(on) Test Voltage Vgs 4.5V
Threshold Voltage Vgs 450mV
Power Dissipation Pd 570mW
Transistor Case Style SOT-363
No. of Pins 6Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (15-Jun-2015)
Continuous Drain Current Id N Channel 1.28A
Current Id Max 1.28A
Drain Source Voltage Vds N Channel 20V
Module Configuration Dual
On Resistance Rds(on) N Channel 0.22ohm
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Voltage Vds Typ 20V
Voltage Vgs Max 450mV
Voltage Vgs Rds on Measurement 4.5V

Alternative Descriptions

SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 | Siliconix / Vishay SI1912EDH-T1-E3 | RS Americas
MOSFET, NN CH, 20V, SOT363 | element14


Frequently Asked Questions

Where can I find additional details, specifications and documents for a SI1912EDH-T1-E3?

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What category does SI1912EDH-T1-E3 fall under?

The SI1912EDH-T1-E3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the SI1912EDH-T1-E3 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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