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Details for SCT2H12NZGC11 by Rohm
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
MOSFET N-CH 1.7KV 3.7A TO-3PFM
SCT2H12NZGC11 image

SCT2H12NZGC11 by Rohm

MOSFET N-CH 1.7KV 3.7A TO-3PFM
Features
35W 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant Symbol Value Unit Tube - Type Packaging Reel size (mm) - SCT2H12NZ Basic ordering unit (pcs) Tape width (mm) - 30 Continuous drain current Tc = 25u00b0C Tc = 100u00b0C Pulsed drain current Parameter Marking Taping code
Part Information
SCT2H12NZGC11 image
RoHS Compliant
Specifications
Transistor Polarity:
N Channel
Continuous Drain Current Id:
3.7A
Drain Source Voltage Vds:
1.7kV
On Resistance Rds(on):
1.15ohm
Rds(on) Test Voltage Vgs:
18V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
35W
Transistor Case Style:
TO-3PFM
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Alternate Descriptions
SiC MOSFET N-Channel 1700V 3.7A TO-3PFM RS Components
MOSFET, N-CH, 1.7KV, TO-3PFM; MOSFET Configuration:Single; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Product Range:- RoHS Compliant: Yes Newark Electronics
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SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM Future Electronics
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SiC-N 1700V 1150mOhm 3.7A TO3PF Rutronik