RQ3E100BNTB

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> Semiconductors - Discretes

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Series Information for RQ3E100BNTB - Rohm

Features

  • feature
    1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free.

Description

MOSFET N-CH 30V 10A HSMT-8

Specifications

Transistor Polarity:
N Channel
Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0077ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
2W
Transistor Case Style:
HSMT
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2018)

Alternate Descriptions

Avnet America

Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel

Avnet America product

Avnet Europe

Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel

Avnet Europe product