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Details for RQ3E100BNTB by Rohm
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
MOSFET N-CH 30V 10A HSMT-8
RQ3E100BNTB image

RQ3E100BNTB by Rohm

MOSFET N-CH 30V 10A HSMT-8
Features
1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free.
Part Information
RQ3E100BNTB image
RoHS Compliant
Specifications
Transistor Polarity:
N Channel
Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0077ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
2W
Transistor Case Style:
HSMT
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2018)
Alternate Descriptions
MOSFET Transistor, N Channel, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V RoHS Compliant: Yes Newark Electronics
Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel Avnet America
Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel Avnet Europe