RN779FFHT106

Electronic & Electrical Components

> Semiconductors - Discretes

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Series Information for RN779FFHT106 - Rohm

Features

  • feature
    1) Small mold type. (UMD3) 2) High-frequency resistance witch is small and low capacity. zConstruction zStructure UMD3 0.9MIN. 0.8MIN. 1.6 0.65 1.3 ROHM : UMD3 JEITA : SC-70 JEDEC : SOT-323 dot (year week factory) 2.0u00b10.2 2.1u00b10.1 1.25u00b10.1 0.3u00b10.1 u5404u30eau30fcu30c9u3068u3082 u540cu5bf8u6cd5 (3) 1.3u00b10.1 uff080.65uff09 uff080.65uff09 (2) (1) 0.15u00b10.05 0.9u00b10.1 0.7u00b10.1 0.1Min 0uff5e0.1 Each lead has same dimension Silicon epitaxial planar zTaping dimensions (Unit : mm) 4.0u00b10.1 4.0u00b10.1 2.0u00b10.05 u03c61.55u00b10.05 3.5u00b10.05 1.75u00b10.1 8.0u00b10.2 u03c60.5u00b10.05 2.4u00b10.1 2.25u00b10.1 0 5.5u00b10.2 1.25u00b10.1 2.4u00b10.1 0.3u00b10.1 0uff5e0.1 zAbsolute maximum ratings (Ta=25u00b0C) Symbol Unit VR V IF mA Tj u2103 Tstg u2103 Limits 50 50 Parameter Reverse voltage (DC) orward current (DC) ion temperature torage temperature 150 -55 to +150 F Junct S zElectrical characteristics (Ta=25u00b0C) Symbol Min. Typ. Max. Unit VF - - 1 V IF=10mA IR - - 0.1 u00b5A VR=50V Ct - - 0.9 pF VR=35V , f=1MHz Rf - - 7 u03a9 IF=10mA,f=100MHz Conditions Capacitance between terminals gh frequency resistance everse current Parameter ward voltage R Hi For AEC-Q101 Qualified

Description

PIN DIODE AUTO 50V SOT-323-3

Specifications

Diode Configuration:
Dual Series
Resistance @ If:
7ohm
Breakdown Voltage Vbr:
50V
Diode Case Style:
SOT-323
No. of Pins:
3 Pin
Total Capacitance Ct:
0.9pF
Forward Current If(AV):
50mA
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
AEC-Q101
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)

Alternate Descriptions

Avnet America

PIN Diode Dual 50V 50mA 7Ohm 3-Pin SOT-323 Emboss T/R