RFD16N05LSM9A MOSFETs by ON Semiconductor

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

Status: Active
Series: RFD16N05LSM
RoHS: Compliant
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These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

Prices starting from US$0.41


Distributor Starting From Stock
Logo for Future Electronics Future Electronics US$0.42
22,500
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Logo for Newark Electronics Newark Electronics US$0.48
4,315
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Logo for element14 element14 US$0.45
4,315
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Logo for Farnell Farnell US$0.43
4,315
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Logo for Transfer Multisort Elektronik Transfer Multisort Elektronik US$0.61
2,464
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Logo for Avnet Asia Avnet Asia US$0.41
-
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Features

16A, 50V
rDS(ON)= 0.047Ω
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drives
Can be Driven Directly from CMOS, NMOS, TTL Circuits
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Devicee
Related Literature  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Applications
AC-DC Merchant Power Supply - Servers & Workstations
Server & Mainframe
End Products
Workstation

Specifications

Description RFD16N05LSM
Compliance Pb-free
Channel Polarity N-Channel
Configuration Single
V(BR)DSS Min (V) 50
VGS Max (V) ±10
VGS(th) Max (V) 2
ID Max (A) 16
PD Max (W) 60
RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) 50
RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) -
Qg Typ @ VGS = 10 V (nC) 43
Ciss Typ (pF) -
Package Type DPAK-3 / TO-252-3

Alternative Descriptions

N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA | Future Electronics
Mosfet Transistor, N Channel, 16 A, 50 V, 47 Mohm, 5 V, 2 V Rohs Compliant: Yes |Onsemi RFD16N05LSM9A | Newark Electronics
MOSFET, N-CH, 50V, 16A, TO-252AA-3 | element14
Transistor: N-MOSFET | Transfer Multisort Elektronik
MOSFET N-Channel 50V 16A TO252AA | RS
Trans MOSFET N-CH 50V 16A 3-Pin(2+Tab) TO-252AA T/R | Avnet Asia


Frequently Asked Questions

Where can I find additional details, specifications and documents for a RFD16N05LSM9A?

Additional datasheets, footprints and schematics for RFD16N05LSM9A are listed on our Part Details page. You can also find images and similar parts to RFD16N05LSM9A on this page.

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What category does RFD16N05LSM9A fall under?

The RFD16N05LSM9A is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to RFD16N05LSM9A when available in the MOSFETs range under the specifications section at the bottom of the details page.

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Is the RFD16N05LSM9A RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for RFD16N05LSM9A have stock available?

Authorised distributors including Future Electronics, Newark Electronics, element14, Farnell and Transfer Multisort Elektronik have stock available or on a lead time for RFD16N05LSM9A.

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