R6004ENX

Electronic & Electrical Components

> Semiconductors - Discretes

> Transistors

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Series Information for R6004ENX - Rohm

Features

  • feature
    Unit 600 VDSS ID *1 A V V uf0b120 V/ns 150 Reverse diode dv/dt IAR Range of storage temperature Tstg Power dissipation (Tc = 25u00b0C) u00b0C W Junction temperature A dv/dt *4 15 -55 to +150 ID,pulse *2 ID *1 uf0b12.2 A A Tj u00b0C mJ EAR *3 Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive 0.8 EAS *3 0.13 mJ PD 40 46 (1) (3) (2) (1) Gate (2) Drain (3) Source *1 BODY DIODE 1/12 2014.03 - Rev.B

Description

MOSFET N-CH 600V 4A TO-220FM

Specifications

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.9ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
40W
Transistor Case Style:
TO-220FM
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)

Alternate Descriptions

Avnet America

Trans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk

Avnet America product

Avnet Europe

Trans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk

Avnet Europe product