QS6K1TR

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> Semiconductors - Discretes

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Series Information for QS6K1TR - Rohm

Features

  • feature
    1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) Each lead has same dimensions TSMT6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0~0.1 0.16 0.85 1.0MAX 0.7 0.3 ~ 0.6 Abbreviated symbol : K01 zPackaging specifications

Description

MOSFET DUAL NN 30V 1A

Specifications

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
1A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.364ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
900mW
Transistor Case Style:
TSMT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Continuous Drain Current Id N Channel:
1A
Current Id Max:
1A
Drain Source Voltage Vds N Channel:
30V
Module Configuration:
Dual
On Resistance Rds(on) N Channel:
0.17ohm
Pulse Current Idm:
4A
Termination Type:
Surface Mount Device
Voltage Vds Typ:
30V
Voltage Vgs Rds on Measurement:
2.5V
Voltage Vgs th Max:
1.5V
Voltage Vgs th Min:
500mV

Alternate Descriptions

Avnet America

Trans MOSFET N-CH 30V 1A 6-Pin TSMT T/R

Avnet America product

Avnet Europe

Trans MOSFET N-CH 30V 1A 6-Pin TSMT T/R

Avnet Europe product

Future Electronics

N-Channel + N-Channel 1.25 W 30 V 364 mOhm 2.4 nC SMT 2.5 V Drive MosFet -TSMT-6