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Details for PD55003-E by STMicroelectronics
Semiconductors - Discretes > Transistors > RF FET Transistors
MOSFET RF N-CH 40V 2.5A POWERSO
PD55003-E image

PD55003-E by STMicroelectronics

MOSFET RF N-CH 40V 2.5A POWERSO
Part Information
PD55003-E image
RoHS Compliant
Specifications
Drain Source Voltage Vds:
40V
Continuous Drain Current Id:
2.5A
Power Dissipation Pd:
31.7W
Operating Frequency Min:
-
Operating Frequency Max:
1GHz
RF Transistor Case:
PowerSO-10RF
No. of Pins:
3Pins
Operating Temperature Max:
165°C
Product Range:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)
Transistor Type:
RF FET
Alternate Descriptions
RF FET Transistor, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF RoHS Compliant: Yes Newark Electronics
Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube Avnet America
Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube Avnet Europe
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PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF Future Electronics