MMBTA92

Semiconductors - Discretes

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Series Information for MMBTA92 - STMicroelectronics

Features

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Description

TRANSISTOR PNP SMD SOT-23
This device is designed for high-voltage driver applica- tions. Sourced from process 76.

Specifications

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-300V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
350mW
DC Collector Current:
-500mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)
Collector Emitter Saturation Voltage Vce(on):
500mV
Current Ic @ Vce Sat:
20mA
Current Ic Continuous a Max:
500mA
Current Ic hFE:
30mA
Gain Bandwidth ft Typ:
50MHz
Hfe Min:
40
Power Dissipation Ptot Max:
350mW
SMD Marking:
A92
Termination Type:
Surface Mount Device
Series Information for MMBTA92 - ON Semiconductor

Description

TRANSISTOR PNP SOT-23

Specifications

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-300V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
350mW
DC Collector Current:
-500mA
DC Current Gain hFE:
25hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
500mV
Continuous Collector Current Ic Max:
100mA
Current Ic Continuous a Max:
100mA
Current Ic hFE:
10mA
Full Power Rating Temperature:
25°C
Gain Bandwidth ft Min:
50MHz
Gain Bandwidth ft Typ:
50MHz
Hfe Min:
40
No. of Transistors:
1
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Power Dissipation Ptot Max:
350mW
SMD Marking:
2D
Tape Width:
8mm
Voltage Vcbo:
300V

Alternate Descriptions

Avnet America

Trans GP BJT PNP 300V 0.5A 3-Pin SOT-23 T/R

Avnet America product

Avnet Europe

Trans GP BJT PNP 300V 0.5A 3-Pin SOT-23 T/R

Avnet Europe product

Conrad

Collector current: -500 mA; Collector cutoff current: -250 nA; Collector emitter voltage U(CEO): -300 V; Collector-emitter saturation voltage (max.): -500 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: -30 mA; DC current gain hFE - reference voltage: -10 V; Enclosure type (semiconductors): SOT 23-3; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 350 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 50 MHz; Type (manufacturer type): MMBTA92; Type (transistors): PNP

Conrad product