MJD210T4G General Purpose and Low VCE(sat) Transistors by ON Semiconductor

5.0 A, 25 V PNP Bipolar Power Transistor

Status: Active
Series: MJD210
RoHS: Compliant
View Datasheet Manufacturer Site View Pricing & Stock

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Prices starting from US$0.18


Distributor Starting From Stock
Logo for Farnell Farnell US$0.21
142,535
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Logo for Newark Electronics Newark Electronics US$0.36
3,520
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Logo for element14 element14 US$0.32
3,520
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Logo for Future Electronics Future Electronics US$0.19
2,500
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Logo for Chip One Stop Chip One Stop US$0.22
2,500
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Logo for Avnet Silica Avnet Silica -
2,500
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Logo for Avnet America Avnet America US$0.18
-
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Logo for RS Americas RS Americas US$0.34
-
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Logo for Avnet Asia Avnet Asia US$0.19
-
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Logo for EBV Elektronik EBV Elektronik -
-
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Features

Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant
MJD200 is the complementary NPN device

Specifications

Description MJD210
Compliance Pb-free Halide free
Polarity PNP
Type General Purpose
VCE(sat) Max (V) 1.8
IC Cont. (A) 5
VCEO Min (V) 25
VCBO (V) 40
VEBO (V) 8
VBE(sat) (V) 2.5
VBE(on) (V) 1.6
hFE Min 45
hFE Max 180
fT Min (MHz) 3
PTM Max (W) 12.5
Package Type DPAK-3

Alternative Descriptions

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT | Farnell
Transistor, Pnp, -25V, -5A, To-252 | Newark Electronics
TRANSISTOR, PNP, -25V, -5A, TO-252 | element14
MJD Series 25 V 5 A Tab Mount PNP Complementary Plastic Power TransistorTO-252-3 | Future Electronics
PNP Power Transistor 25V 5A 12.5W DPAK | RS
Trans GP BJT PNP 25V 5A 3-Pin(2+Tab) DPAK T/R | Avnet Silica
ON Semi MJD210T4G PNP Bipolar Transistor, 5 A, 25 V, 3-Pin DPAK | ON Semiconductor MJD210T4G | RS Americas


Frequently Asked Questions

Where can I find additional details, specifications and documents for a MJD210T4G?

Additional datasheets, footprints and schematics for MJD210T4G are listed on our Part Details page. You can also find images and similar parts to MJD210T4G on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for MJD210T4G on our Product Comparison page. Access via the 'View Pricing & Stock' button to view MJD210T4G price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does MJD210T4G fall under?

The MJD210T4G is listed under Discrete & Power Modules > General Purpose and Low VCE(sat) Transistors.

Can I view similar or alternative parts?

You can view similar parts to MJD210T4G when available in the General Purpose and Low VCE(sat) Transistors range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the MJD210T4G you can contact the distributor directly for product support, shipping queries etc.

Is the MJD210T4G RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for MJD210T4G have stock available?

Authorised distributors including Farnell, Newark Electronics, element14, Future Electronics and Chip One Stop have stock available or on a lead time for MJD210T4G.

How do I check stock and lead times for all distributors?

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