MAX2602ESA+ by Analog Devices

3.6V, 1W RF Power Transistors for 900MHz Applications

Status: Active
Series: MAX2602
RoHS: Unknown
View Datasheet Manufacturer Site View Pricing & Stock

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor’s collector current as the temperature changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40°C to +85°C).

Prices starting from US$3.65


Distributor Starting From Stock
Logo for element14 element14 US$4.16
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Logo for Richardson RFPD Richardson RFPD US$3.65
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Logo for Newark Electronics Newark Electronics -
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Features

Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries
DC-to-Microwave Operating Range
1W Output Power at 900MHz
On-Chip Diode for Accurate Biasing (MAX2602)
Low-Cost Silicon Bipolar Technology
Does Not Require Negative Bias or Supply Switch
High Efficiency: 58%

Specifications

Frequency (MHz) (min) 0
Frequency (MHz) (max) 1000
POUT (dBm) 29
Efficiency (%) 58
Footprint (mm x mm) 4.9 x 6.0
Package/Pins SOIC (N)/8
BudgetaryPrice (See Notes) 2.8


MAX2602ESA+ Semiconductors - ICs by Analog Devices

RF POWER TRANSISTOR 1GHZ 3.6V NSOIC-8

Status: Unknown
Series: -
RoHS: Unknown
View Datasheet Manufacturer Site View Pricing & Stock

Specifications

Frequency Min 0Hz
Frequency Max 1GHz
Gain 11.6dB
Noise Figure Typ 3.3dB
RF IC Case Style NSOIC
No. of Pins 8Pins
Supply Voltage Min -
Supply Voltage Max 3.6V
Operating Temperature Min -40°C
Operating Temperature Max 85°C
Product Range -
Automotive Qualification Standard -
RoHS Phthalates Compliant To Be Advised
MSL MSL 1 - Unlimited
SVHC No SVHC (15-Jan-2018)

Alternative Descriptions

POWER BJT TRANSISTOR | Richardson RFPD
RF POWER TRANSISTOR, 1GHZ, 3.6V, NSOIC-8 | Farnell
Rf Power Transistor, 1Ghz, 3.6V, Nsoic-8 | Newark Electronics

Frequently Asked Questions

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Is the MAX2602ESA+ RoHS compliant?

This part has not been flagged as RoHS Compliant.

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Authorised distributors including element14, Richardson RFPD, Farnell and Newark Electronics have stock available or on a lead time for MAX2602ESA+ .

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