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Details for LM5110-3M/NOPB by Texas Instruments
Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs
LM5110-3M/NOPB
Buy Directly from Texas Instruments (14080 in stock) $0.6100
COMPOUND GATE DRIVER LOW SIDE SOIC-8
LM5110-3M/NOPB image

LM5110-3M/NOPB by Texas Instruments

COMPOUND GATE DRIVER LOW SIDE SOIC-8
Features
5A sink/3A Source Current Capability
Available in Dual Noninverting, Dual Inverting and Combination Configurations
Compound CMOS and Bipolar Outputs Reduce Output Current Variation
Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
Fast Propagation Times (25-ns Typical)
Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
Independent Inputs (TTL Compatible)
Independently Drives Two N-Channel MOSFETs
Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
Packages:
Pin-Out Compatible With Industry Standard Gate Drivers
Shutdown Input Provides Low Power Mode
Supply Rail Undervoltage Lockout Protection
Two Channels can be Connected in Parallel to Double the Drive Current
Part Information
LM5110-3M/NOPB image
RoHS Compliant
Description
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermallyenhanced WSON-10 packages.
Specifications
Driver Configuration:
Low Side
Peak Output Current:
5A
Supply Voltage Min:
3.5V
Supply Voltage Max:
14V
Driver Case Style:
SOIC
No. of Pins:
8Pins
Input Delay:
25ns
Output Delay:
25ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualification Standard:
-
RoHS Phthalates Compliant:
Yes
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (27-Jun-2018)
Alternate Descriptions
COMPOUND GATE DRIVER, LOW SIDE, SOIC-8; Driver Configuration:Low Side; Peak Output Current:5A; Supply Voltage Min:3.5V; Supply Voltage Max:14V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:25ns; Output Delay:25ns; OperatingRoHS Compliant: Yes Newark Electronics
MOSFET DRVR 5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC N Rail Avnet America
MOSFET DRVR 5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC N Rail Avnet Europe
5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input Texas Instruments