ISO5851DW

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Details for Texas Instruments

ISO5851DW

High-CMTI 2.5-A / 5-A reinforced isolated IGBT, MOSFET gate driver with active protection feature
Buy Directly from Texas Instruments (4383 in Stock)
$2.7600 per unit
Series Information for ISO5851DW - Texas Instruments

Features

  • feature
    100-kV/u03bcs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • feature
    15-V to 30-V Output Driver Supply Voltage
  • feature
    2-A Active Miller Clamp
  • feature
    2.5-A Peak Source and 5-A Peak Sink Currents
  • feature
    3-V to 5.5-V Input Supply Voltage
  • feature
    Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • feature
    CMOS Compatible Inputs
  • feature
    Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • feature
    Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • feature
    Isolation Surge Withstand Voltage 12800-VPK
  • feature
    Operating Temperature: u201340u00b0C to +125u00b0C Ambient
  • feature
    Output Short-Circuit Clamp
  • feature
    Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • feature
    Safety-Related Certifications:
  • feature
    Short Propagation Delay: 76 ns (Typ), 110 ns (Max)

Description

MOSFET/IGBT DRIVER INV/NON-INV WSOIC16
The ISO5851 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

Specifications

Driver Configuration:
Inverting Non Inverting
Peak Output Current:
5A
Supply Voltage Min:
3V
Supply Voltage Max:
5.5V
Driver Case Style:
WSOIC
No. of Pins:
16Pins
Input Delay:
76ns
Output Delay:
76ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Product Range:
-
RoHS Phthalates Compliant:
Yes
MSL:
MSL 2 - 1 year
SVHC:
No SVHC (27-Jun-2018)

Alternate Descriptions

Avnet America

MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC Tube

Avnet America product

Avnet Europe

MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC Tube

Avnet Europe product

Texas Instruments

High-CMTI 2.5-A / 5-A reinforced isolated IGBT, MOSFET gate driver with active protection feature

Texas Instruments product