IMZ1AT108

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Series Information for IMZ1AT108 - Rohm

Features

  • feature
    1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

Description

MOSFET NPNPNP 50V SOT457

Specifications

Transistor Polarity:
NPN PNP
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
300mW
DC Collector Current:
150mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
400mV
Current Ic Continuous a Max:
50mA
Gain Bandwidth ft Typ:
180MHz
Hfe Min:
120
Module Configuration:
Dual
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Transistor Type:
General Purpose
Transition Frequency ft:
180MHz

Alternate Descriptions

Avnet America

Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SMT T/R

Avnet America product

Allied Electronics, Inc

ROHM IMZ1AT108 Dual NPN+PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-74

Avnet Europe

Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SMT T/R

Avnet Europe product

Avnet Asia

Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SMT T/R

Avnet Asia product

Conrad

Collector current: -150 mA, +150 mA; Collector cutoff current: -100 nA, +100 nA; Collector emitter voltage U(CEO): -50 V, +50 V; Collector-emitter saturation voltage (max.): -500 mV, +400 mV; DC current gain (hFE): 120; DC current gain hFE - reference current: -1 mA, +1 mA; DC current gain hFE - reference voltage: -6 V, +6 V; Enclosure type (semiconductors): SMT6; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 300 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays; Transit frequency f(T): 180 MHz, 140 MHz; Type (manufacturer type): IMZ1AT108; Type (transistors): NPN , PNP

Conrad product

Future Electronics

IMZ1A Series 50 V 150 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-74