Maximum junction temperature : TJ =175 °C |
Positive temperaure co-efficient for easy parallel operating |
High current capability |
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A |
High input impedance |
Fast switching: EOFF =6.5uJ/A |
Tightened parameter distribution |
RoHS compliant |
Applications |
---|
Consumer Appliances |
Description | FGH40N60SMDF |
---|---|
Compliance | Pb-free Halide free |
V(BR)CES Typ (V) | 600 |
IC Max (A) | 40 |
VCE(sat) Typ (V) | 1.9 |
VF Typ (V) | 1.3 |
Eoff Typ (mJ) | 0.25 |
Eon Typ (mJ) | 1.3 |
Trr Typ (ns) | 57 |
Irr Typ (A) | - |
Gate Charge Typ (nC) | 122 |
Short Circuit Withstand (µs) | - |
EAS Typ (mJ) | - |
PD Max (W) | 349 |
Co-Packaged Diode | Yes |
Package Type | TO-247-3 |
Transistor IGBT N-Ch 600V 80A TO247 | RS |
Igbt Single Rohs Compliant: Yes |Onsemi FGH40N60SMDF | Newark Electronics |
IGBT,N CH,FAST,W/DIO,600V,80A,TO247 | element14 |
Where can I find additional details, specifications and documents for a FGH40N60SMDF?
Additional datasheets, footprints and schematics for FGH40N60SMDF are listed on our Part Details page. You can also find images and similar parts to FGH40N60SMDF on this page.
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What category does FGH40N60SMDF fall under?
The FGH40N60SMDF is listed under Discrete & Power Modules > IGBTs.
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Is the FGH40N60SMDF RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
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