FGA60N60UFDTU Transistors by ON Semiconductor

IGBT N CH W DIODE 600V 120A TO3PN

Status: Unknown
Series: -
RoHS: Unknown
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Specifications

DC Collector Current 120A
Collector Emitter Saturation Voltage Vce(on) 600V
Power Dissipation Pd 298W
Collector Emitter Voltage V(br)ceo 600V
Transistor Case Style TO-3PN
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC Lead (27-Jun-2018)
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Power Dissipation Max 298W
Transistor Type IGBT

Alternative Descriptions

IGBT,N CH,W DIODE,600V,120A,TO3PN | Farnell
Igbt Single Transistor, General Purpose, 120 A, 600 V, 298 W, 600 V, To-3Pn, 3 |Onsemi FGA60N60UFDTU | Newark Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FGA60N60UFDTU?

Additional datasheets, footprints and schematics for FGA60N60UFDTU are listed on our Part Details page. You can also find images and similar parts to FGA60N60UFDTU on this page.

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What category does FGA60N60UFDTU fall under?

The FGA60N60UFDTU is listed under Semiconductors - Discretes > Transistors > IGBT Single Transistors.

Can I view similar or alternative parts?

You can view similar parts to FGA60N60UFDTU when available in the IGBT Single Transistors range under the specifications section at the bottom of the details page.

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Is the FGA60N60UFDTU RoHS compliant?

This part has not been flagged as RoHS Compliant.

Which authorised distributors for FGA60N60UFDTU have stock available?

Authorised distributors including Farnell and Newark Electronics have stock available or on a lead time for FGA60N60UFDTU.

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