FDS8858CZ MOSFETs by ON Semiconductor

Dual N & P-Channel PowerTrench® MOSFET 30V


These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Where to Buy

Prices starting from US$0.34

Distributor Stock
Logo for RS
RS
from US$0.42
695
in stock
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Logo for Newark Electronics
Newark Electronics
from US$0.42
9,013
in stock
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element14
from US$0.59
9,013
in stock
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Farnell
from US$0.57
9,013
in stock
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Schukat Electronic
from US$0.49
1,350
in stock
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EBV Elektronik
-
2,500
in stock
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Future Electronics
from US$0.35
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Avnet America
from US$0.34
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Avnet Asia
from US$0.36
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Avnet Silica
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Features

Q1 N-Channel Max. RDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A Max. RDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3 A
Q2 P-Channel Max. RDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A Max. RDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A
High Power and Current Handling Capability in a Widely Used Surface Mount Package
Fast Switching Speed
Applications
This product is general usage and suitable for many different applications.
Synchronous Buck
End Products
Inverter

Specifications

Description FDS8858CZ
Compliance Pb-free Halide free
Channel Polarity Complementary
Configuration Dual
V(BR)DSS Min (V) ±30
VGS Max (V) 25
VGS(th) Max (V) ±3
ID Max (A) N: 8.6, P: -7.3
PD Max (W) 2
RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) N: 20.0, P:34.5
RDS(on) Max @ VGS = 10 V (mΩ) N: 1.0, P:20.5
Qg Typ @ VGS = 4.5 V (nC) 15
Qg Typ @ VGS = 10 V (nC) 33
Ciss Typ (pF) 1675
Package Type SOIC-8

Alternative Descriptions

Dual Mosfet, N And P Channel, 8.6 A, 30 V, 17 Mohm, 10 V, 1.6 V Rohs Compliant: Yes |Onsemi FDS8858CZ | Newark Electronics
MOSFET, DUAL, NP, SMD, SO-8 | element14
N+P-Ch 30V 8,6/7,3A 2,0W SO8 | Schukat Electronic
MOSFET Dual N/P-Ch 30V 8.6A/7.3A SOIC8 | RS
Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC N T/R | EBV Elektronik
Dual N/P-Channel 30 V 1.6 W 24/46 nC Silicon Surface Mount Mosfet - SOIC-8 | Future Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDS8858CZ?

Additional datasheets, footprints and schematics for FDS8858CZ are listed on our Part Details page. You can also find images and similar parts to FDS8858CZ on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDS8858CZ on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDS8858CZ price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDS8858CZ fall under?

The FDS8858CZ is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDS8858CZ when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDS8858CZ you can contact the distributor directly for product support, shipping queries etc.

Is the FDS8858CZ RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDS8858CZ have stock available?

Authorised distributors including Newark Electronics, element14, Farnell, Schukat Electronic and RS have stock available or on a lead time for FDS8858CZ.

How do I check stock and lead times for all distributors?

Stock availability and lead times will be displayed for FDS8858CZ often in real-time on the comparison pages.

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