Shielded Gate MOSFET Technology |
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A |
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A |
Advanced Package and Silicon combination for low rDS(on) and high efficiency |
MSL1 robust package design |
100% UIL tested |
RoHS Compliant |
Applications |
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This product is general usage and suitable for many different applications. |
Description | FDMS86103L |
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Compliance | Pb-free Halide free |
Channel Polarity | N-Channel |
Configuration | Single |
V(BR)DSS Min (V) | 100 |
VGS Max (V) | ±20 |
VGS(th) Max (V) | 3 |
ID Max (A) | 81 |
PD Max (W) | 104 |
RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 11 |
RDS(on) Max @ VGS = 10 V (mΩ) | 8 |
Qg Typ @ VGS = 4.5 V (nC) | - |
Qg Typ @ VGS = 10 V (nC) | 23 |
Ciss Typ (pF) | 2790 |
Package Type | PQFN-8 |
MOSFET, N CH, 100V, 49A, POWER56 | Farnell |
Mosfet Transistor, N Channel, 49 A, 100 V, 0.0064 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDMS86103L | Newark Electronics |
FDMS86103L Series 100 V 81 A 8 mOhm N-Ch PowerTrench« MOSFET - Power56 | Future Electronics |
Trans MOSFET N-CH 100V 12A 8-Pin Power 56 T/R | Avnet America |
Where can I find additional details, specifications and documents for a FDMS86103L?
Additional datasheets, footprints and schematics for FDMS86103L are listed on our Part Details page. You can also find images and similar parts to FDMS86103L on this page.
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What category does FDMS86103L fall under?
The FDMS86103L is listed under Discrete & Power Modules > MOSFETs.
Can I view similar or alternative parts?
You can view similar parts to FDMS86103L when available in the MOSFETs range under the specifications section at the bottom of the details page.
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Is the FDMS86103L RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
Which authorised distributors for FDMS86103L have stock available?
Authorised distributors including Chip One Stop, Farnell, Newark Electronics, Future Electronics and Avnet America have stock available or on a lead time for FDMS86103L.
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