FDMS3660S MOSFETs by ON Semiconductor

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V


This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Where to Buy

Prices starting from US$0.84

Distributor Stock
Logo for Farnell
Farnell
from US$0.93
5,681
in stock
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Logo for element14
element14
from US$1.03
5,683
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Newark Electronics
from US$0.94
5,681
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Chip One Stop
from US$0.84
3,000
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Transfer Multisort Elektronik
from US$1.24
2,644
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Avnet Silica
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6,000
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Logo for Future Electronics
Future Electronics
from US$0.89
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Logo for Avnet America
Avnet America
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Avnet Asia
from US$0.88
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EBV Elektronik
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Features

Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
Applications
Notebook PC

Specifications

Description FDMS3660S
Compliance Pb-free Halide free
Channel Polarity N-Channel
Configuration Dual
V(BR)DSS Min (V) 30
VGS Max (V) 12
VGS(th) Max (V) Q1: 2.7, Q2; 2.2
ID Max (A) Q1: 13.0, Q2: 30.0
PD Max (W) Q1:2.2, Q2: 2.5
RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1: 11.0, Q2: 2.2
RDS(on) Max @ VGS = 10 V (mΩ) Q1: 8, Q2: 1.8
Qg Typ @ VGS = 4.5 V (nC) 17
Qg Typ @ VGS = 10 V (nC) 29
Ciss Typ (pF) 4130
Package Type PQFN-8

Alternative Descriptions

MOSFET, DUAL N CH, 30V, 60A, POWER 56-8 | element14
Dual Mosfet, Dual N Channel, 60 A, 30 V, 0.0013 Ohm, 10 V, 1.5 V Rohs Compliant: Yes |Onsemi FDMS3660S | Newark Electronics
Transistor: N-MOSFET x2 | Transfer Multisort Elektronik
Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R | Avnet Silica
Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56 | Future Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDMS3660S?

Additional datasheets, footprints and schematics for FDMS3660S are listed on our Part Details page. You can also find images and similar parts to FDMS3660S on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDMS3660S on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDMS3660S price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDMS3660S fall under?

The FDMS3660S is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDMS3660S when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDMS3660S you can contact the distributor directly for product support, shipping queries etc.

Is the FDMS3660S RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDMS3660S have stock available?

Authorised distributors including element14, Newark Electronics, Farnell, Chip One Stop and Transfer Multisort Elektronik have stock available or on a lead time for FDMS3660S.

How do I check stock and lead times for all distributors?

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