FDME1034CZT MOSFETs by ON Semiconductor

Complementary PowerTrench® MOSFET ±20V


This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Where to Buy

Prices starting from US$0.19

Distributor Stock
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RS
from US$0.39
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Newark Electronics
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Future Electronics
from US$0.38
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Avnet America
from US$0.37
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Avnet Asia
from US$0.39
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Farnell
from US$0.19
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EBV Elektronik
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Avnet Silica
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Features

Q1: N-Channel Max. RDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4A Max. RDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9A Max. RDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5A Max. RDS(on) = 160 mΩ at VGS= 1.5 V, ID = 2.1A
Q2: P-Channel Max. RDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3A Max. RDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8A Max. RDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5A Max. RDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (see datasheet Note 3)
RoHS Compliant
Applications
This product is general usage and suitable for many different applications.

Specifications

Description FDME1034CZT
Compliance Pb-free Halide free
Channel Polarity Complementary
Configuration Dual
V(BR)DSS Min (V) ±20
VGS Max (V) 8
VGS(th) Max (V) ±1
ID Max (A) N: 2.8, P: -2.6
PD Max (W) 1.4
RDS(on) Max @ VGS = 2.5 V (mΩ) N:86, P: 213
RDS(on) Max @ VGS = 4.5 V (mΩ) N: 66, P: 142
RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) -
Qg Typ @ VGS = 10 V (nC) 5.5
Ciss Typ (pF) 305
Package Type UDFN-6

Alternative Descriptions

MOSFET N/P-Ch 20V 3.4A/2.3A MicroFET6 | RS
Mosfet Transistor, N And P Channel, 3.8 A, 20 V, 0.055 Ohm, 4.5 V, 700 Mv |Onsemi FDME1034CZT | Newark Electronics
Dual N/P-Channel 20 V 160/530 mOhm 4.2/7.7 nC 1.4 W Mosfet MICROFET 1.6x1.6 | Future Electronics
Trans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R | Avnet America
MOSFET,NP CH,W,20V,MICROFET1.6X1.6 | Farnell


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDME1034CZT?

Additional datasheets, footprints and schematics for FDME1034CZT are listed on our Part Details page. You can also find images and similar parts to FDME1034CZT on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDME1034CZT on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDME1034CZT price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDME1034CZT fall under?

The FDME1034CZT is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDME1034CZT when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDME1034CZT you can contact the distributor directly for product support, shipping queries etc.

Is the FDME1034CZT RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDME1034CZT have stock available?

Authorised distributors including RS, Newark Electronics, Future Electronics, Avnet America and Avnet Asia have stock available or on a lead time for FDME1034CZT.

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