FDG6322C MOSFETs by ON Semiconductor

Dual N & P Channel Digital FET 25V

Status: Active
Series: -
RoHS: Compliant
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These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Prices starting from US$0.12


Distributor Starting From Stock
Logo for Future Electronics Future Electronics US$0.14
18,000
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Logo for Avnet America Avnet America US$0.13
6,000
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Logo for element14 element14 US$0.22
4,635
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Logo for Transfer Multisort Elektronik Transfer Multisort Elektronik US$0.18
2,841
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Logo for Newark Electronics Newark Electronics US$0.18
1,685
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Logo for Farnell Farnell US$0.21
1,685
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Logo for EBV Elektronik EBV Elektronik -
-
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Logo for Avnet Silica Avnet Silica -
-
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Features

N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V
P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V)
Gate-Source Zener for ESD ruggedness (>6k V Human Body Model).
Applications
This product is general usage and suitable for many different applications.

Specifications

Description FDG6322C
Compliance Pb-free Halide free
Channel Polarity Complementary
Configuration Dual
V(BR)DSS Min (V) ±25
VGS Max (V) -8
VGS(th) Max (V) ±1.5
ID Max (A) N:0.22 , P: -0.41
PD Max (W) 0.3
RDS(on) Max @ VGS = 2.5 V (mΩ) N:5000, P:1500
RDS(on) Max @ VGS = 4.5 V (mΩ) N: 450, P: 1100
RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) -
Qg Typ @ VGS = 10 V (nC) 1.1
Ciss Typ (pF) 62
Package Type SC-88-6 / SC-70-6 / SOT-363-6

Alternative Descriptions

Dual N & P Channel 25 V 4 Ohm Digital FET SC70-6 | Future Electronics
Trans MOSFET N/P-CH 25V 0.22A/0.41A 6-Pin SC-70 T/R | Avnet America
MOSFET, N & P CH, 25V, 0.22A, SC-70-6 | element14
Transistor: N/P-MOSFET | Transfer Multisort Elektronik
Mosfet, N & P Ch, 25V, 0.22A, Sc-70-6 | Newark Electronics
MOSFET N/P-Ch 25V 0.22A/0.41A SC-70-6 | RS


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDG6322C?

Additional datasheets, footprints and schematics for FDG6322C are listed on our Part Details page. You can also find images and similar parts to FDG6322C on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDG6322C on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDG6322C price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDG6322C fall under?

The FDG6322C is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDG6322C when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDG6322C you can contact the distributor directly for product support, shipping queries etc.

Is the FDG6322C RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDG6322C have stock available?

Authorised distributors including Future Electronics, Avnet America, element14, Transfer Multisort Elektronik and Newark Electronics have stock available or on a lead time for FDG6322C.

How do I check stock and lead times for all distributors?

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