Status: | Active |
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Series: | - |
RoHS: | Compliant |
Prices starting from US$1.77
650V @TJ = 150°C |
Max. RDS(on) = 190mΩ |
Ultra low gate charge ( Typ. Qg = 63nC ) |
Low effective output capacitance ( Typ. Coss.eff = 178pF ) |
100% avalanche tested |
Applications |
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This product is general usage and suitable for many different applications. |
Description | FCP190N60E |
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Compliance | Pb-free Halide free |
Channel Polarity | N-Channel |
Configuration | Single |
V(BR)DSS Min (V) | 600 |
VGS Max (V) | DC: ±20, AC: ±30 |
VGS(th) Max (V) | 3.5 |
ID Max (A) | 20.6 |
PD Max (W) | 208 |
RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
RDS(on) Max @ VGS = 4.5 V (mΩ) | - |
RDS(on) Max @ VGS = 10 V (mΩ) | 190 |
Qg Typ @ VGS = 4.5 V (nC) | - |
Qg Typ @ VGS = 10 V (nC) | 63 |
Ciss Typ (pF) | 2385 |
Package Type | TO-220-3 |
MOSFET N-Ch 600V 20A SuperFET-II TO220 | RS |
Sf2 600V 190Mohm E To220/Tube |Onsemi FCP190N60E | Newark Electronics |
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3 | Future Electronics |
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail | Avnet America |
MOSFET, N-CH, 600V, 20.6A, TO-220 | Farnell |
Where can I find additional details, specifications and documents for a FCP190N60E?
Additional datasheets, footprints and schematics for FCP190N60E are listed on our Part Details page. You can also find images and similar parts to FCP190N60E on this page.
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What category does FCP190N60E fall under?
The FCP190N60E is listed under Discrete & Power Modules > MOSFETs.
Can I view similar or alternative parts?
You can view similar parts to FCP190N60E when available in the MOSFETs range under the specifications section at the bottom of the details page.
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Is the FCP190N60E RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
Which authorised distributors for FCP190N60E have stock available?
Authorised distributors including RS, Newark Electronics, Future Electronics, Avnet America and Avnet Asia have stock available or on a lead time for FCP190N60E.
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