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Details for CSD87335Q3DT by Texas Instruments
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
MOSFET DUAL N-CH 30V LSON-8
CSD87335Q3DT image

CSD87335Q3DT by Texas Instruments

MOSFET DUAL N-CH 30V LSON-8
Features
93.5% System Efficiency at 15 A
Half-Bridge Power Block
Halogen Free
High-Density SON 3.3 mm u00d7 3.3 mm Footprint
High-Frequency Operation (Up To 1.5 MHz)
Low Switching Losses
Optimized for 5-V Gate Drive
Pb-Free Terminal Plating
RoHS Compliant
Ultralow Inductance Package
Up to 25-A Operation
Up to 27-V VIN
Part Information
CSD87335Q3DT image
Specifications
Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
-
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0067ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
750mV
Power Dissipation Pd:
6W
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
No SVHC (27-Jun-2018)
No. of Pins:
8Pins
Transistor Case Style:
LSON
Alternate Descriptions
MOSFET, DUAL N-CH, 30V, LSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:750mV RoHS Compliant: Yes Newark Electronics
30V POWERBLOCK N CH MOSFET Avnet America
30V POWERBLOCK N CH MOSFET Avnet Europe