BPW96B

Optoelectronics & Displays

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Series Information for BPW96B - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: T-1u00be - Dimensions (in mm): u00d8 5 - Leads with stand-off - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 20u00b0 - Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Description

PHOTOTRANSISTOR NPN OPTICAL SENSOR
BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation.

Specifications

Wavelength Typ:
850nm
Viewing Angle:
20°
Power Consumption:
150mW
No. of Pins:
2Pins
Transistor Case Style:
T-1 3/4 (5mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
20°
Current Ic Typ:
4.5mA
Nom Sensitivity @ mW/cm²:
4.5mA @ 1mW/cm²
Operating Temperature Max:
100°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +100°C
Peak Spectral Response Wavelength:
850nm
Rise Time:
2µs
Transistor Polarity:
NPN
Transistor Type:
Photo
Voltage Vcc:
5V

Alternate Descriptions

Avnet America

Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk

Avnet America product

Avnet Europe

Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk

Avnet Europe product

Future Electronics

BPW96 Series 850 nm ▒ 20░ Through Hole Silicon NPN Phototransistor - T-1 3/4

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