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Details for BPW85C by Vishay Intertechnology
Optoelectronics & Displays > Phototransistors >
PHOTOTRANSISTOR T1
BPW85C image

BPW85C by Vishay Intertechnology

PHOTOTRANSISTOR T1
Features
- Package type: leaded - Package form: T-1 - Dimensions (in mm): u00d8 3 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 25u00b0
Part Information
BPW85C image
RoHS Compliant
Description
BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation.
Specifications
Wavelength Typ:
850nm
Viewing Angle:
25°
Power Consumption:
100mW
No. of Pins:
2Pins
Transistor Case Style:
T-1 (3mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
25°
Current Ic Typ:
5mA
Fall Time tf:
1.5µs
Lead Spacing:
2.54mm
Nom Sensitivity @ mW/cm²:
5mA @ 1mW/cm²
Operating Temperature Max:
100°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +100°C
Peak Spectral Response Wavelength:
950nm
Rise Time:
1.5µs
Sensitivity @ mW / cm² Max:
8.0@1
Sensitivity @ mW / cm² Min:
3.0@1
Transistor Polarity:
NPN
Transistor Type:
Photo
Voltage Vcc:
5V
Alternate Descriptions
PHOTOTRANSISTOR, T1; Wavelength Typ:850nm; Viewing Angle:25°; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:T-1 (3mm); Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); AngleRoHS Compliant: Yes Newark Electronics
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