BPW85

Optoelectronics & Displays

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Series Information for BPW85 - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: T-1 - Dimensions (in mm): u00d8 3 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 25u00b0

Description

PHOTOTRANSISTOR T1
BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation.

Specifications

Wavelength Typ:
850nm
Viewing Angle:
50°
Power Consumption:
100mW
No. of Pins:
2Pins
Transistor Case Style:
T-1 (3mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
25°
Current Ic Typ:
50mA
Fall Time tf:
1.5µs
Lead Spacing:
2.54mm
Operating Temperature Max:
100°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +100°C
Peak Spectral Response Wavelength:
830nm
Rise Time:
1.5µs
Sensitivity @ mW / cm² Max:
4.0@1
Sensitivity @ mW / cm² Min:
1.5@1
Transistor Polarity:
NPN
Transistor Type:
Photo
Voltage Vcc:
5V

Alternate Descriptions

Avnet America

Phototransistor Chip Silicon 850nm 2-Pin T-1

Avnet America product

Avnet Europe

Phototransistor Chip Silicon 850nm 2-Pin T-1

Avnet Europe product

Future Electronics

850 nm ▒ 25░ Half Sensitivity T-1 Through Hole Silicon NPN Phototransistor