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Details for BPW77NB by Vishay Intertechnology
Optoelectronics & Displays > Phototransistors >
PHOTO TRANSISTOR NPN SILICON
BPW77NB image

BPW77NB by Vishay Intertechnology

PHOTO TRANSISTOR NPN SILICON
Features
- Package type: leaded - Package form: TO-18 - Dimensions (in mm): u00d8 4.7 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 10u00b0 - Base terminal connected - Hermetically sealed package - Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
Part Information
BPW77NB image
RoHS Compliant
Description
BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.
Specifications
Wavelength Typ:
850nm
Viewing Angle:
10°
Power Consumption:
250mW
No. of Pins:
3Pins
Transistor Case Style:
TO-18
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Input Current:
50mA
No. of Channels:
1Channels
Output Voltage:
70V
Output Voltage Max:
70V
Transistor Polarity:
NPN
Transistor Type:
NPN
Alternate Descriptions
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