BPW77NA

Optoelectronics & Displays

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Series Information for BPW77NA - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: TO-18 - Dimensions (in mm): u00d8 4.7 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 10u00b0 - Base terminal connected - Hermetically sealed package - Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

Description

PHOTOTRANSISTOR NPN 3-TO-18
BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.

Specifications

Wavelength Typ:
850nm
Viewing Angle:
10°
Power Consumption:
250mW
No. of Pins:
3Pins
Transistor Case Style:
TO-18
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
10°
Current Ic Typ:
50mA
Operating Temperature Max:
125°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +125°C
Peak Spectral Response Wavelength:
850nm
Rise Time:
6µs
Transistor Polarity:
NPN
Transistor Type:
Photo

Alternate Descriptions

Avnet America

Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA

Avnet America product

Avnet Europe

Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA

Avnet Europe product

Future Electronics

BPW77NA Series ▒10░ Sensitivity Through Hole NPN Silicon Phototransistor - TO-18