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Details for BPW77NA by Vishay Intertechnology
Optoelectronics & Displays > Phototransistors >
PHOTOTRANSISTOR NPN 3-TO-18
BPW77NA image

BPW77NA by Vishay Intertechnology

PHOTOTRANSISTOR NPN 3-TO-18
Features
- Package type: leaded - Package form: TO-18 - Dimensions (in mm): u00d8 4.7 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 10u00b0 - Base terminal connected - Hermetically sealed package - Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
Part Information
BPW77NA image
RoHS Compliant
Description
BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.
Specifications
Wavelength Typ:
850nm
Viewing Angle:
10°
Power Consumption:
250mW
No. of Pins:
3Pins
Transistor Case Style:
TO-18
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
10°
Current Ic Typ:
50mA
Operating Temperature Max:
125°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +125°C
Peak Spectral Response Wavelength:
850nm
Rise Time:
6µs
Transistor Polarity:
NPN
Transistor Type:
Photo
Alternate Descriptions
NPN Phototransistor 850nm 10deg TO-206AA RS Components
PHOTOTRANSISTOR, NPN, 3-TO-18; Wavelength Typ:850nm; Viewing Angle:10°; Power Consumption:250mW; No. of Pins:3Pins; Transistor Case Style:TO-18; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019);RoHS Compliant: Yes Newark Electronics
Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Avnet America
Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Avnet Europe
BPW77NA Series ▒10░ Sensitivity Through Hole NPN Silicon Phototransistor - TO-18 Future Electronics