BPW24R

Electronic & Electrical Components

> Optoelectronics LEDs & Displays

> Photo Diodes

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Series Information for BPW24R - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: TO-18 - Dimensions (in mm): u00d8 4.7 - Radiant sensitive area (in mm2): 0.78 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: uf06a = u00b1 12u00b0 - Hermetically sealed package - Cathode connected to package - Central chip alignment - Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC

Description

PHOTODIODE 11PF
BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages.

Specifications

No. of Pins:
2Pins
Diode Case Style:
TO-18
Wavelength of Peak Sensitivity:
900nm
Angle of Half Sensitivity ±:
12°
Dark Current:
2000pA
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Active Area:
0.78mm²
Breakdown Voltage Vbr:
200V
Operating Temperature Range:
-40°C to +125°C
Peak Wavelength:
900nm
Reverse Voltage Vr Max:
60V
Rise Time:
7ns
Sensitivity:
0.6A/W
Wavelength Typ:
900nm

Alternate Descriptions

Avnet America

Photodiode PIN Chip 900nm 0.6A/W Sensitivity 2-Pin TO-18 Bulk

Avnet America product

Avnet Europe

Photodiode PIN Chip 900nm 0.6A/W Sensitivity 2-Pin TO-18 Bulk

Avnet Europe product

Future Electronics

900 nm ▒12░ Sensitivity Radial Through Hole Silicon PIN Photodiode - TO-18