BPW17N

Optoelectronics & Displays

> Phototransistors

>

Organise Price Comparison Results by
distributor space
Distributor Statistics for BPW17N
Total in Stock: -in-stock
Lowest MOQ: -
SELECT OPTIONS
Lowest price for your selection
-
in Stock
-
Average Price: - per unit
Stocking Distributors: -
Price Comparison for BPW17N
Series Information for BPW17N - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: T-u00be - Dimensions (in mm): u00d8 1.8 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 12u00b0 - Comliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Description

PHOTOTRANSISTOR T3/4
BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.

Specifications

Wavelength Typ:
825nm
Viewing Angle:
12°
Power Consumption:
100mW
No. of Pins:
2Pins
Transistor Case Style:
T-3/4 (1.8mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
12°
Current Ic Typ:
1mA
External Length / Height:
2.9mm
Fall Time tf:
3.7µs
Lead Spacing:
2.54mm
Nom Sensitivity @ mW/cm²:
1mA @ 1mW/cm²
Peak Spectral Response Wavelength:
950nm
Rise Time:
3.7µs
Sensitivity @ mW / cm² Max:
1.0@1
Sensitivity @ mW / cm² Min:
0.5@1
Transistor Polarity:
NPN
Transistor Type:
Photo
Voltage Vcc:
5V

Alternate Descriptions

Avnet America

Phototransistor Chip Silicon 825nm 2-Pin T-3/4

Avnet America product

Avnet Europe

Phototransistor Chip Silicon 825nm 2-Pin T-3/4

Avnet Europe product

Distrelec

.49

Distrelec product