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Details for BPW16N by Vishay Intertechnology
Optoelectronics & Displays > Phototransistors >
PHOTOTRANSISTOR NPN T-3/4
BPW16N image

BPW16N by Vishay Intertechnology

PHOTOTRANSISTOR NPN T-3/4
Features
- Package type: leaded - Package form: T-u00be - Dimensions (in mm): u00d8 1.8 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: u03d5 = u00b1 40u00b0 - Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Part Information
BPW16N image
RoHS Compliant
Description
BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.
Specifications
Wavelength Typ:
825nm
Viewing Angle:
40°
Power Consumption:
100mW
No. of Pins:
2Pins
Transistor Case Style:
T-3/4 (1.8mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
40°
Current Ic Typ:
50mA
Operating Temperature Max:
100°C
Operating Temperature Min:
-40°C
Operating Temperature Range:
-40°C to +100°C
Peak Spectral Response Wavelength:
825nm
Rise Time:
4.8µs
Transistor Polarity:
NPN
Transistor Type:
Photo
Alternate Descriptions
TRANSISTOR, PHOTO, NPN, 825NM, T-3/4; Wavelength Typ:825nm; Viewing Angle:40°; Power Consumption:100mW; No. of Pins:2Pins; Product Range:-; Automotive Qualification Standard:-; MSL:-; DC Collector Current:0.05A; Dark Current:200nA RoHS Compliant: Yes Newark Electronics
Phototransistor Chip Silicon 825nm 2-Pin T-3/4 Avnet America
Phototransistor Chip Silicon 825nm 2-Pin T-3/4 Avnet Europe