BPV11

Optoelectronics & Displays

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Series Information for BPV11 - Vishay Intertechnology

Features

  • feature
    - Package type: leaded - Package form: T-1u00be - Dimensions (in mm): u00d8 5 - High photo sensitivity - High radiant sensitivity - Suitable for visible and near infrared radiation - Fast response times - Angle of half sensitivity: uf06a = u00b1 15u00b0 - Base terminal connected

Description

PHOTOTRANSISTOR T1.3/4
BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation.

Specifications

Wavelength Typ:
850nm
Viewing Angle:
15°
Power Consumption:
150mW
No. of Pins:
3Pins
Transistor Case Style:
T-1 3/4 (5mm)
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jan-2019)
Angle of Half Sensitivity ±:
15°
Current Ic Typ:
10mA
Fall Time tf:
3.8µs
Lead Spacing:
2.54mm
Nom Sensitivity @ mW/cm²:
10mA @ 1mW/cm²
Peak Spectral Response Wavelength:
950nm
Rise Time:
3.8µs
Sensitivity @ mW / cm² Max:
10.0@1
Sensitivity @ mW / cm² Min:
3.0@1
Transistor Polarity:
NPN
Transistor Type:
Photo
Voltage Vcc:
5V

Alternate Descriptions

Avnet America

Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4

Avnet America product

Avnet Europe

Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4

Avnet Europe product

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.44

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