2N7002PW 115 Part Information
|Transistor Polarity||N Channel|
|Continuous Drain Current Id||310mA|
|Drain Source Voltage Vds||60V|
|On Resistance Rds(on)||1ohm|
|Rds(on) Test Voltage Vgs||10V|
|Threshold Voltage Vgs||1.75V|
|Power Dissipation Pd||200mW|
|Transistor Case Style||SOT-323|
|No. of Pins||3Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (27-Jun-2018)|
|Current Id Max||300mA|
|Operating Temperature Min||-55°C|
|Operating Temperature Range||-55°C to +150°C|
|Voltage Vgs Max||20V|
Alternative Part Descriptions
- MOSFET,N CHANNEL,60V,0.3A,SOT323; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes | Newark Electronics
- 2N7002PW Series N-Channel 60 V 1.6 Ohm 260 mW 0.8 nC SMT TrenchMOS FET - SOT-323 | Future Electronics EMEA
- Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R | Avnet America
- Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R | Avnet Europe
- Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R | Avnet Asia
- 2N7002PW Series N-Channel 60 V 1.6 Ohm 260 mW 0.8 nC SMT TrenchMOS FET - SOT-323 | Future Electronics
- 2N7002PW Series N-Channel 60 V 1.6 Ohm 260 mW 0.8 nC SMT TrenchMOS FET - SOT-323 | Future Electronics APAC
Frequently Asked Questions
Where can I find additional details, specifications and documents for a 2N7002PW 115?
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What category does 2N7002PW 115 fall under?
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Is the 2N7002PW 115 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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