2N6660-E3 Part Information
- - Military Qualified - Low On-Resistence: 1.3 uf057 - Low Threshold: 1.7 V - Low Input Capacitance: 35 pF - Fast Switching Speed: 8 ns - Low Input and Output Leakage BENEFITS - Guaranteed Reliability - Low Offset Voltage - Low-Voltage Operation - Easily Driven Without Buffer - High-Speed Circuits - Low Error Voltage
|Transistor Polarity||N Channel|
|Continuous Drain Current Id||990mA|
|Drain Source Voltage Vds||75V|
|On Resistance Rds(on)||1.3ohm|
|Rds(on) Test Voltage Vgs||10V|
|Threshold Voltage Vgs||1.7V|
|Power Dissipation Pd||725mW|
|Transistor Case Style||TO-205AD|
|No. of Pins||3Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||-|
|Operating Temperature Min||-55°C|
|Operating Temperature Range||-55°C to +150°C|
Alternative Part Descriptions
- N CHANNEL MOSFET, 60V, 1.1A, TO-205AD; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(on):1.3ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
Where can I find additional details, specifications and documents for a 2N6660-E3?
Additional datasheets, footprints and schematics for 2N6660-E3 are listed in our Part Details tab. You can also find the 2N6660-E3 image and similar parts on this details page.
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What category does 2N6660-E3 fall under?
The 2N6660-E3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the 2N6660-E3 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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