2MBI650VXA-170E-50 Semiconductors - Discretes by Fuji Electric

IGBT MODULE DUAL 650A/1700V

Status: Unknown
Series: -
RoHS: Unknown
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Distributor Stock
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Newark
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Specifications

Transistor Polarity Dual N Channel
DC Collector Current 900A
Collector Emitter Saturation Voltage Vce(on) 2.1V
Power Dissipation Pd 4.15kW
Collector Emitter Voltage V(br)ceo 1.7kV
Transistor Case Style Module
No. of Pins 10Pins
Operating Temperature Max 150°C
Product Range -

Alternative Descriptions

Igbt, Module, Dual N Channel, 1.7Kv, 900A | Newark Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a 2MBI650VXA-170E-50?

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What category does 2MBI650VXA-170E-50 fall under?

The 2MBI650VXA-170E-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI650VXA-170E-50 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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