2MBI200U4H-120-50 Part Information

Details for 2MBI200U4H-120-50 by Fuji Electric

Electronic & Electrical Components>Semiconductors - Discretes>Transistors

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Part Specifications

Transistor Polarity N Channel
DC Collector Current 200A
Collector Emitter Saturation Voltage Vce(on) 2.05V
Power Dissipation Pd 1.04kW
Collector Emitter Voltage V(br)ceo 1.2kV
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 150°C
Product Range -
Module Configuration Dual
Power Dissipation Max 1.04kW
RoHS Compliant

Alternative Part Descriptions

  • IGBT, 2 PACK MODULE 1200V, 200A, M234; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:1.04kW; Junction Temperature, Tj Max:150°C; IGBT Termination:Stud; Product Range:- RoHS Compliant: Yes | Newark Electronics

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Where can I find additional details, specifications and documents for a 2MBI200U4H-120-50?

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What category does 2MBI200U4H-120-50 fall under?

The 2MBI200U4H-120-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI200U4H-120-50 RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Farnell.

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Authorised distributors including Newark Electronics have stock available or on a lead time for 2MBI200U4H-120-50.

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