2MBI200U4H-120-50 Part Information
|Transistor Polarity||N Channel|
|DC Collector Current||200A|
|Collector Emitter Saturation Voltage Vce(on)||2.05V|
|Power Dissipation Pd||1.04kW|
|Collector Emitter Voltage V(br)ceo||1.2kV|
|Transistor Case Style||Module|
|No. of Pins||7Pins|
|Operating Temperature Max||150°C|
|Power Dissipation Max||1.04kW|
Alternative Part Descriptions
- IGBT, 2 PACK MODULE 1200V, 200A, M234; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:1.04kW; Junction Temperature, Tj Max:150°C; IGBT Termination:Stud; Product Range:- RoHS Compliant: Yes | Newark Electronics
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Where can I find additional details, specifications and documents for a 2MBI200U4H-120-50?
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The 2MBI200U4H-120-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the 2MBI200U4H-120-50 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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