2MBI200U2A-060-50 Semiconductors - Discretes by Fuji Electric

IGBT DUAL MODULE 200A 600V NPT

Status: Unknown
Series: -
RoHS: Unknown
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Specifications

Transistor Polarity N Channel
DC Collector Current 200A
Collector Emitter Saturation Voltage Vce(on) 2.45V
Power Dissipation Pd 660W
Collector Emitter Voltage V(br)ceo 600V
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 150°C
Product Range -
Current Ic @ Vce Sat 200A
Current Ic Continuous a Max 200A
Current Temperature 25°C
External Depth 34mm
External Length / Height 30mm
External Width 92mm
Fall Time tf 480ns
Full Power Rating Temperature 25°C
Isolation Voltage 2.5kV
Junction Temperature Tj Max 150°C
Module Configuration Dual
No. of Transistors 2
Power Dissipation Max 660W
Pulsed Current Icm 400A
Rise Time 400ns
Termination Type Screw
Voltage Vces 600V

Alternative Descriptions

Igbt, Dual, Module, 200A, 600V, Npt | Newark Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a 2MBI200U2A-060-50?

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What category does 2MBI200U2A-060-50 fall under?

The 2MBI200U2A-060-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI200U2A-060-50 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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