2MBI200S-120-50 Part Information
|Transistor Polarity||N Channel|
|DC Collector Current||200A|
|Collector Emitter Saturation Voltage Vce(on)||2.6V|
|Power Dissipation Pd||1.5kW|
|Collector Emitter Voltage V(br)ceo||1.2kV|
|Transistor Case Style||Module|
|No. of Pins||7Pins|
|Operating Temperature Max||150°C|
|Current Ic @ Vce Sat||200A|
|Current Ic Continuous a Max||200A|
|External Length / Height||30mm|
|Fall Time tf||450ns|
|Full Power Rating Temperature||25°C|
|Junction Temperature Tj Max||150°C|
|No. of Transistors||2|
|Power Dissipation Max||1.5kW|
|Pulsed Current Icm||400A|
Alternative Part Descriptions
- IGBT, DUAL, MODULE, 200A, 1200V, NPT; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:1.5kW; Junction Temperature, Tj Max:150°C; IGBT Termination:Stud; Product Range:- RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
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Is the 2MBI200S-120-50 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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