2MBI150U4A-120-50 Semiconductors - Discretes by Fuji Electric

IGBT DUAL MODULE 150A 1200V

Status: Unknown
Series: -
RoHS: Unknown
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Specifications

Transistor Polarity N Channel
DC Collector Current 200A
Collector Emitter Saturation Voltage Vce(on) 2.3V
Power Dissipation Pd 735W
Collector Emitter Voltage V(br)ceo 1.2kV
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 150°C
Product Range -
Current Ic @ Vce Sat 150A
Current Ic Continuous a Max 200A
Current Temperature 25°C
External Depth 34mm
External Length / Height 30mm
External Width 92mm
Fall Time tf 410ns
Full Power Rating Temperature 25°C
Isolation Voltage 2.5kV
Junction Temperature Tj Max 150°C
Module Configuration Dual
No. of Transistors 2
Power Dissipation Max 735W
Pulsed Current Icm 400A
Rise Time 320ns
Termination Type Screw
Voltage Vces 1.2kV

Alternative Descriptions

Igbt, Dual, Module, 150A, 1200V | Newark Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a 2MBI150U4A-120-50?

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The 2MBI150U4A-120-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI150U4A-120-50 RoHS compliant?

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