2MBI100U4A-120-50 Semiconductors - Discretes by Fuji Electric

IGBT DUAL MODULE 100A 1200V

Status: Unknown
Series: -
RoHS: Unknown
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Where to Buy

Prices starting from US$28.52

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Specifications

Transistor Polarity N Channel
DC Collector Current 150A
Collector Emitter Saturation Voltage Vce(on) 2.2V
Power Dissipation Pd 540W
Collector Emitter Voltage V(br)ceo 1.2kV
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 125°C
Product Range -
Current Ic @ Vce Sat 100A
Current Ic Continuous a Max 150A
Current Temperature 25°C
External Depth 34mm
External Length / Height 30mm
External Width 92mm
Fall Time tf 410ns
Full Power Rating Temperature 25°C
Isolation Voltage 2.5kV
Junction Temperature Tj Max 150°C
Module Configuration Dual
No. of Transistors 2
Operating Temperature Min -40°C
Operating Temperature Range -40°C to +125°C
Power Dissipation Max 540W
Pulsed Current Icm 300A
Rise Time 320ns
Termination Type Screw
Voltage Vces 1.2kV

Alternative Descriptions

Igbt, Dual, Module, 100A, 1200V | Newark Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a 2MBI100U4A-120-50?

Additional datasheets, footprints and schematics for 2MBI100U4A-120-50 are listed on our Part Details page. You can also find images and similar parts to 2MBI100U4A-120-50 on this page.

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What category does 2MBI100U4A-120-50 fall under?

The 2MBI100U4A-120-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI100U4A-120-50 RoHS compliant?

This part has not been flagged as RoHS Compliant.

Which authorised distributors for 2MBI100U4A-120-50 have stock available?

Authorised distributors including element14, Farnell and Newark Electronics have stock available or on a lead time for 2MBI100U4A-120-50.

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