2MBI100TA-060-50 Semiconductors - Discretes by Fuji Electric

IGBT DUAL MODULE 100A 600V NPT

Status: Unknown
Series: -
RoHS: Unknown
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Prices starting from US$31.53


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Specifications

Transistor Polarity N Channel
DC Collector Current 100A
Collector Emitter Saturation Voltage Vce(on) 2.4V
Power Dissipation Pd 310W
Collector Emitter Voltage V(br)ceo 600V
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 150°C
Product Range -
Current Ic @ Vce Sat 100A
Current Ic Continuous a Max 100A
Current Temperature 25°C
External Depth 34mm
External Length / Height 30mm
External Width 92mm
Fall Time tf 400ns
Full Power Rating Temperature 25°C
Height 30mm
Isolation Voltage 2.5kV
Junction Temperature Tj Max 150°C
Module Configuration Dual
No. of Transistors 2
Power Dissipation Max 310W
Pulsed Current Icm 200A
Rise Time 400ns
Termination Type Screw
Voltage Vces 600V

Alternative Descriptions

Igbt, Dual, Module, 100A, 600V, Npt | Newark Electronics


Frequently Asked Questions

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What category does 2MBI100TA-060-50 fall under?

The 2MBI100TA-060-50 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the 2MBI100TA-060-50 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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